ACT108-600E,412

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ACT108-600E,412 datasheet

Маркировка

ACT108-600E,412
Производитель

NXP Semiconductors
Описание

NXP Semiconductors ACT108-600E,412 Breakover Current Ibo Max: 8.8 A Capacitance: - Configuration: Single Current - Gate Trigger (igt) (max): 10mA Current - Hold (ih): 9mA Current - Hold (ih) (max): 25mA Current - Non Rep. Surge 50, 60hz (itsm): 8A, 8.8A Current - On State (it (rms)) (max): 800mA Current - Peak Pulse (10 X 1000?µs): - Current - Peak Pulse (8 X 20?µs): - Forward Voltage Drop: 1.3 V Gate Trigger Current (igt): 10 mA Gate Trigger Voltage (vgt): 1 V Holding Current (ih Max): 25 mA ID_COMPONENTS: 1948911 Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting Style: Through Hole Mounting Type: Through Hole Number Of Elements: 1 Off-state Leakage Current @ Vdrm Idrm: 0.2 mA On-state Rms Current (it Rms): 0.8 A Package / Case: TO-92-3 (Standard Body), TO-226 Rated Repetitive Off-state Voltage Vdrm: 600 V Repetitive Peak Forward Blocking Voltage: 600 V Series: - Triac Type: Logic - Sensitive Gate Voltage - Breakover: 650V Voltage - Gate Trigger (vgt) (max): 1V Voltage - Off State: 600V Voltage - On State: 1.3V RoHS: yes On-State RMS Current (It RMS): 0.8 A Non Repetitive On-State Current: 8.8 A Rated Repetitive Off-State Voltage VDRM: 600 V Off-State Leakage Current @ VDRM IDRM: 0.2 mA On-State Voltage: 1.3 V Holding Current (Ih Max): 25 mA Gate Trigger Voltage (Vgt): 1 V Gate Trigger Current (Igt): 10 mA Factory Pack Quantity: 1000 Other Names: 934063938412
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